R5016ANX transistors rev.a 1/5 10v drive nch mosfet R5016ANX z structure silicon n-channel mosfet z features 1) low on-resistance. 2) fast switching speed. 3) wide soa (safe operating area). 4) gate-source voltage (v gss ) guaranteed to be r 30v. 5) drive circuits can be simple. 6) parallel use is easy. z applications switching z dimensions (unit : mm) to-220fm (1)base (2)collector (3)emitter 4.5 2.8 0.75 3.2 ( 2 )( 3 ) ( 1 ) 0.8 2.54 2.6 2.54 1.3 1.2 14.0 12.0 8.0 2.5 10.0 15.0 z z packaging specifications z inner circuit package code basic ordering unit (pieces) ? 500 bulk R5016ANX type z z absolute maximum ratings (ta=25 q c) parameter range of storage temperature channel temperature total power dissipation (tc=25 c) drain current gate-source voltage drain-source voltage v dss v gss p d tch 500 v v a w c 30 16 i d i dp continuous pulsed a 64 50 150 tstg c ? 55 to + 150 avalanche energy avalanche current i as 8 e as 18 symbol limits unit ? 1 pw 10 s, duty cycle 1% ? 2 l 500 h, v dd = 50v, r g = 25 , starting, tch = 25 c ? 3 limited only by maximum tempterature allowed ? 1 ? 3 ? 3 i s a i sp a a mj continuous pulsed 16 64 source current (body diode) ? 1 ? 2 ? 2 z z thermal resistance parameter c/w rth(ch-c) symbol limits unit channel to case 2.5 ? 1 body diode (1) gate (2) drain (3) source ? 1 (1) (2) (3)
R5016ANX transistors rev.a 2/5 z electrical characteristics (ta=25 q c) parameter gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge symbol i gss v (br)dss i dss v gs(th) r ds(on) c iss | y fs | c oss c rss min. ? 500 ? 2.5 ? ? 6.0 ? ? ? ? ? ? 0.21 1800 ? 750 55 100 ? 100 4.5 0.27 ? ? ? ? na v gs = 30v, v ds = 0v i d = 1ma, v gs = 0v v ds = 500v, v gs = 0v v ds = 10v, i d = 1ma i d = 8a, v gs = 10v v ds = 25v i d = 8a, v ds = 10v v gs = 0v f = 1mhz v a v pf s pf pf t d(on) ? 40 ? ns t r ? 50 ? v gs = 10v ns t d(off) ? 150 ? r l = 31.3 ns t f ? 55 ? r g = 10 ns q g ? 50 ? v dd 250v i d = 16a v gs = 10v r l = 15.6 / r g = 10 nc q gd ? 21 ? nc typ. max. unit conditions i d = 8a, v dd 250v ? pulsed ? ? ? ? ? ? ? ? q gs ? 9.5 ? nc ? z z body diode characteristics (source-drain) (ta=25 q c) v sd ?? 1.5 v i s = 16a, v gs =0v forward voltage ? pulsed parameter symbol min. typ. max. unit conditions ?
R5016ANX transistors rev.a 3/5 z electrical characteristics curves 0 5 10 15 20 25 30 0 1020304050 ta= 25c pulsed 5.0 v v gs = 4.5 v 6.0 v 7.0 v 8.0v 6.5 v 10 v 5.5 v fig.2 typical output characteristics( > ) 0.001 0.01 0.1 1 10 100 0.0 1.5 3.0 4.5 6.0 v ds = 10v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig.4 typical transfer characteristics 0.01 0.1 1 10 0.1 1 10 100 v gs = 10v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig.6 static drain-source on-state resistance vs. drain current 0 0.1 0.2 0.3 0.4 0.5 0.6 051015 ta=25c pulsed i d = 8.0a i d = 16.0a fig.7 static drain-source on-state resistance vs. gate source 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds = 10v pulsed ta= -25c ta= 25c ta= 75c ta= 125c fig.9 forward transfer admittance vs. drain current 0.01 0.1 1 10 100 0.1 1 10 100 1000 ta = 25c single pulse dc operation p w = 100us p w = 1ms operation in this area is limited by r ds(on) p w = 10ms fig.1 maximum safe operating aera fig.3 typical output characteristics( > ) 0 5 10 15 20 012345 ta= 25c pulsed v gs = 4.5v 5.0 v 6.0 v 5.5 v 6.5 v 7.0 v 8.0 v 10 v fig.8 static drain-source on-state resistance vs. channel 0 0.1 0.2 0.3 0.4 0.5 0.6 -50 0 50 100 150 v gs = 10v pulsed i d = 8.0a i d = 16.0a fig.5 gate threshold voltage vs. channel temperature 0 1 2 3 4 5 6 -50 0 50 100 150 v ds = 10v i d = 1ma drain-source voltage : vds ( v ) drain current : i d (a) drain-source voltage: vds (v) drain current: i d (a) drain-source voltage: v ds (v) drain current: i d (a) drain current : i d (a) static drain-source on-stat e resistance : r ds(on) (
) channel temperature: t ch (c) gate threshold voltage: v gs(th) (v) gate-source voltage : v gs (v) drain current : i d (a) gate-source voltage : v gs (v) static drain-source on-stat e resistance : r ds(on) (
) channel temperature: t ch (c) static drain-source on-state resistance : r ds(on ) (
) drain current : i d (a) forward transfer admittance : |yfs| (s)
R5016ANX transistors rev.a 4/5 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 ta = 25c single pulse : 1unit rth b ch-a bb t b = c2b t b rth b ch-a b rth b ch-a b = 48.9c/w 10 100 1000 0.1 1 10 100 ta= 25c di / dt= 100a / s v gs = 0v pulsed fig.13 reverse recovery time vs.reverse drain current 0.01 0.1 1 10 100 00.511.5 v gs = 0v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig.10 reverse drain current vs. sourse-drain voltage 0 5 10 15 0 10203040506070 ta= 25c v dd = 250v i d = 16a r g = 10
pulsed fig.12 dynamic input characteristics 1 10 100 1000 10000 0.1 1 10 100 1000 c i s c oss c rss ta= 25c f= 1mhz v gs = 0v fig.11 typical capacitance vs. drain-source voltage 1 10 100 1000 10000 0.01 0.1 1 10 100 t r t f t d(on) t d(off) ta= 25c v dd = 250v v gs = 10v r g = 10
pulsed fig.14 switching a characteristics fig.15 normalized transient thermal resistance vs. pulse w idth total gate charge : q g (nc) gate-source voltage : v gs (v) drain-source voltage : v ds (v) capacitance : c (pf) source-drain voltage : v sd (v) reverse drain current : i dr (a) reverse drain current : i dr (a) reverse recovery time: t rr (ns) drain current : i d (a) switching time : t (ns) pulse width : pw(s) normarized transient therma l resistance : r (t)
R5016ANX transistors rev.a 5/5 z switching characteristics measurement circuit fig.1 switching time measurement circuit ! fig.2 switching waveforms fig.3 gate charge measurement circuit ! fig.4 gate charge waveform fig.5 avalanche measurement circuit fig.6 avalanche waveform i g (const.)
notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. appendix1-rev2.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / europe / asia / japan contact us : webmaster@ rohm.co. jp www.rohm.com copyright ? 2008 rohm co.,ltd. the products listed in this document are designed to be used with ordinary electronic equipment or de vices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. it is our top priority to supply products with the utmost quality and reliability. however, there is always a chance of failure due to unexpected factors. therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. rohm cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the notes specified in this catalog. 21 saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix
|
